Nnlong-wavelength infrared semiconductor lasers pdf merger

The lasing medium of the semiconductor laser is short and rectangular. The devices were fabricated as buried heterostructure lasers with higlection coatings on both laser facets, resulting in continuous wave operation with optical output power ranging from 17 milliwatts at 292 kelvin to 3 milliwatts at 312 kelvin, at an emission wavelength of 9. Longwavelength semiconductor lasers govind agrawal. The development during the 1970s of gaas semiconductor lasers. Longwavelength semiconductor lasers on ingaas ternary substrates with excellent temperature characteristics vkoji otsubo vyoshito nishijima vhiroshi ishikawa manuscript received june 4,1998 this paper proposes the use of ingaas ternary bulk substrates as a technical breakthrough in longwavelength semiconductor lasers. Infrared semiconductor lasers for dircm applications. Since they are relatively well developed, the bulk of this chapter is devoted to their study. For the wavelength range 4 m inpbased quantum cascade qc lasers are the best suited semiconductor laser variant. Longwavelength instability in broadarea semiconductor lasers f. Since its invention in 1962, the semiconductor laser has come a long way. The shortwavelength side of the 25 urn wavelength band of interest can be covered by gasbbased optically pumped semiconductor disk. Of particular interest are the leadsalt semiconductor lasers covering a large spectral range 2.

Continuous wave operation of quantum cascade lasers is reported up to a temperature of 312 kelvin. It includes three topics not covered in any previous book. Continuous wave operation of a midinfrared semiconductor. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. Therefore the output beam does not have the same dimension in both vertical and horizontal axis. Longwavelength semiconductor lasers on ingaas ternary. Infrared and visible semiconductor lasers springerlink.